jbemi-conduakoi zpioauati, one. 20 stern ave. springfield, new jersey 07081 u sa mr501, mr502, mr504 mr506, mr508, MR510 telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 i);?t;i miniature size, axial lead mounted standard recovery power rectifiers . . . designed for use in power supplies and other applications having need of a device with the following features: ? high current to small size ? high surge current capability ? low forward voltage drop ? void-free economical plastic package ? available in volume quantities designer's data far "want cm" caikfitions tho designers data sheets permit the design of mott circuits entirely from the information presented. limit curves - representing boundaries on device character- istics - are given to facilitate "worst case" design. maximum ratings reting peak repetitive reverse voltage working pa* reverse voltage dc blocking voltage non-repetitive peak reverse voltage average rectified forward current (single phase resistive load.ta - as't.pc board mounting) (1) (eia standard conditions l ? 1/32". tl ? 85c) non- repetitive peak surge current (surge applied at rated load conditions) operating and storage junction temperaturs range (21 symbol vrrm vrwm vr vrsm id ifsm tj,t,tg mr 501 100 150 mh soz 200 250 mr 604 400 450 mr 5o6 600 660 mr 508 800 850 mr 510 1000 1060 (one cycle) ? 65to+175 i- unit volts void amp amp c thermal characteristics chwvctwistic thtrrrul r?ist*nca, junction to ambient ( rfko*nrn*nd*d printed circuit board mounting, s*e note 2 on page 4). symbol rsja max 28 unit c/w electrical characteristics characteristic instantaneous forward voltagt (3) lip - 9.4 amp, tj - 17sc) lip - 9.4 amp, tj - 2sc) reverse current(ri?ddc voltage) 13) tj - 2sc tj - 100c symbol vf |r min - - typ 0.9 1.04 0.1 2,8 men 1.0 1.1 5.0 2s unit volts xa (1) derate for reverse power dissipation. see note on page 2. (2) derate es shown in figure 1. (3) pulse test: pulse width - 300 us. duty cycle - 2.0*. standard recovery power rectifiers 100-1000 volts 3 ampere style 1: pin 1. cathode 2. anode dim min millimeter 9.40 1.22 26-97 imches 0.370 max l.ht-21 1.072 case 287-01 mechanical characteristics case: void free, transfer molded finish: external leads ire plated, leads are readily solderable polarity: indicated by cathode band weight: 1.1 grams (approximately) maximum lead temperature for soldering purposes: 300c, 1/8" from ease for 10 s at 5.0 ib. tension nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice, information furnished by n.i semi-conductors is believed to be both accurate and reliable at the time or"going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. ni semi-conductors encourages customers to verity that datasheets are current before placing orders.
mr501, mr502, mr504, mr506, mr508, MR510 (continued) note 1: determining maximum ratinqs reverse power dissipation and the possibility of thermal runaway mutt be considered whin operating this rktifl*r it reverie voltages *t?v* 200 volts. proper derating may be accomplished by uw of equation 11): ta|max> * tjima*) - r?japf - rsja^blav) i1* whin ta(maxl " maximum allowable ambient temperature tjlmax) * maximum illowibli junction nmpiritur* 1175c or th* temperature it which ther- mil runaway occurs, whichever ii lowlit.) pf(av) " average forwird power dissipation ^r( av) "* average reverse power dissipation r0ja * junction-to-lfnb?nt tri?rrn?l rni??nce figura 1 permits miir use of equation (1) by taking nversa power dinipition and thirrml runawiy into consideretion. the figure solves for a reference temperature ? determined by equation (2): tr ? tj(m?x) ^ r?apr(av) (2) substituting equation (2) into equation (1) yields: ta(mixl ? tr - ftfljapf(av) 13) intpktion of equations (2) and (31 revtali that tr is the ambient tempereturefttwhich thermelrunaway occursorwheretj > 175c, when forward power is zero, the transition from one boundary condition to th* other is evident on the curvet of figure i as e difference in the rate of change of m* dope in the- vicinity of 188c. the data ef figure 1 is bated upon dc conditions. for use in common rectifier circuits. table 1 indicates suggested factor* for an equivalent dc voltage to utt for conservative design; i.e.: vr(equiv) - vjnlpki * f '4> the factor f is derived by consiclering the proparties of the various rectifier circuits and the rectifiers reverse characteristics. example: find ta(rnax) (or mrs10 operated in a 400 voltdc supply using e full wave center-tapped circuit with capacitive filter such that ifjc * 6.0a,(lp(av) " 3.o a). ijpki/'lav] ? 10. input voltage - 283 v(rms) (line to center tap), rgja " 28c/w. stepl: find vr(k)uiv). read f - 1.11 from table 1 .'. vr(equhr)' 1.4di283k1.11) - 4*4 v step 2: find tr from figure 1. read tr - 167c t? vr . 444 v 4 r9ja - 28c/w. step 3: findpp(av) from figure 8. read pp(av) " 4 w 'av -10?if(av)-3.0a steo 4: find taimex) from equation (3). taimax) ? 167-128) 14) - ss^c. table i - values for factor f circuit load sine weve squire wave half weve resistive 0.45 0.61 capacitive* 1.11 1.22 full weve, bridge resistive 0.45 0.61 capacitive o.s5 0.61 full wave centar-tepped>t resistive 0.90 1.22 capachivi 1.11 1.22 ?note met vmpk, =2 vin(pk) tuse line to center tap voltage for vjn. - maximum reference temperature figure 2 - forward power dissipation 200 300 400 boo vr. dc reverse voltage (volts) 1000 1.0 2.0 3.0 4.0 so g.o 7.0 ifiavi, average forward cuiwentiahf)
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